Heterojunction bipolar transistor with monolithically...

Details Heterojunction bipolar transistor with monolithically... Heterojunction bipolar transistor with monolithically...

2005-07-19

2005-07-19

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S197000, C438S235000, C438S285000

Reexamination Certificate

active

06919590

ABSTRACT:
A semiconductor component includes: a semiconductor substrate (110); an epitaxial semiconductor layer (120) above the semiconductor substrate; a bipolar transistor (770, 870) in the epitaxial semiconductor layer; and a field effect transistor (780, 880) in the epitaxial semiconductor layer. A portion of the epitaxial semiconductor layer forms a base of the bipolar transistor and a gate of the field effect transistor, and the portion of the epitaxial semiconductor layer has a substantially uniform doping concentration. In the same or another embodiment, a different portion of the epitaxial semiconductor layer forms an emitter of the bipolar transistor and a channel of the field effect transistor, and the different portion of the epitaxial semiconductor layer has a substantially uniform doping concentration that can be the same as or different from the substantially uniform doping concentration of the portion of the epitaxial semiconductor layer.

REFERENCES:
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patent: 6063655 (2000-05-01), Shealy et al.
patent: 6465289 (2002-10-01), Streit et al.

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