Heterojunction bipolar transistor with improved current gain

Details Heterojunction bipolar transistor with improved current gain Heterojunction bipolar transistor with improved current gain

2008-07-08

2008-07-08

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S022000, C257S197000, C257S024000

Reexamination Certificate

active

11226717

ABSTRACT:
One aspect of the present invention is directed to a heterojunction bipolar transistor (HBT) comprising: a substrate; a buffer layer of undoped semiconductor material; a sub-collector layer; a collector layer; a base layer; an emitter layer; a emitter cap layer; and a contact layer; wherein a planar doping sheet is included between the substrate layer and the collector layer; and a collector electrode in electrical connection to said collector layer; a base electrode in electrical connection with said base layer; and an emitter electrode provided in electrical connection to said emitter layer.

REFERENCES:
patent: 5161235 (1992-11-01), Shur et al.
patent: 5281551 (1994-01-01), Min et al.
patent: 5373186 (1994-12-01), Schubert et al.
patent: 5682040 (1997-10-01), Imanishi
patent: 5856209 (1999-01-01), Imanishi
patent: 6914274 (2005-07-01), Hiroyama et al.
patent: 2002/0139997 (2002-10-01), Tanomura et al.

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