Heterojunction bipolar transistor with dielectric assisted...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S623000, C438S235000, C438S978000

Reexamination Certificate

active

06949776

ABSTRACT:
A heterojunction bipolar transistor (HBT) is disclosed that includes successive emitter, base and collector and sub-collector epitaxial layers and emitter, base and collector contact metals contacting the emitter, base and sub-collector layers respectively. A passivation material is included that covers the uncovered portions of the layers and covers substantially all of the contact metals. The passivation material has a planar surface and a portion of each of the contact metals protrudes from the surface. Planar metals are included on the planar surface, each being isolated from the others and in electrical contact with a respective contact metal. A method for fabricating an HBT is also disclosed, wherein successive emitter, base, collector and sub-collector epitaxial layers are deposited on a substrate, with the substrate being adjacent to the sub-collector layer. The epitaxial layers are etched to provide locations for contact metals and emitter, base and contact metals are deposited on the emitter, base and sub-collector epitaxial layers, respectively. A self-alignment material is deposited on the surface of the substrate around the epitaxial layers and a planarization material is deposited on and covers the top surface of the HBT. The planarization material is then etched so it has a planar surface about the same level as the surface of the self-alignment material and the contact metals protrude from the planar surface. The planar metals are then deposited over the protruding portions of the contact metals.

REFERENCES:
patent: 4996165 (1991-02-01), Chang et al.
patent: 5424227 (1995-06-01), Dietrich et al.
patent: 5535231 (1996-07-01), Lee et al.
patent: 5571732 (1996-11-01), Liu
patent: 5672522 (1997-09-01), Streit et al.
patent: 6310368 (2001-10-01), Yagura
patent: 6670653 (2003-12-01), Micovic et al.
Wang, Introduction to semiconductor technology, GaAs and related compounds, John Wiley & Sons (1990), pp. 170-230.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Heterojunction bipolar transistor with dielectric assisted... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heterojunction bipolar transistor with dielectric assisted..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction bipolar transistor with dielectric assisted... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3435477

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.