Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1997-01-06
1998-02-10
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257198, 257586, 257622, 257628, H01L 310328, H01L 310336, H01L 31072, H01L 31109
Patent
active
057172285
ABSTRACT:
A self-aligned heterojunction bipolar transistor is disclosed which includes a semiconductor substrate having the (100) plane as a main surface, and at least a collector region, a base region, and an emitter region having a bandgap greater than the base region. The emitter region has an under-cut mesa structure and its crystal orientation is defined in outwardly slanted structure that could cause leakage current between the emitter and base and, hence, the transistor has improved electric isolation between the emitter and base although it is self-aligned.
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patent: 5389554 (1995-02-01), Liu et al.
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Ieice Trans. Electron, Sep. 1993, vol. E76-C, No. 9, pp. 1392-1401, "IC-Oriented Self-Aligned High-Performance AIGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs", Yataka Murata et al.
IEEE, May 1995, pp. 643-647, "Novel Self-Aligned Submicron Emitter InP/InGaAs HBT's Using T-Shaped Emitter Electrode", Hiroshi Masuda et al.
IEEE, 1995, pp. 163-166, "Over-220-Ghz-f.sub.t -and-f.sub.max InP/InGaAs Double-Heterojunction Bipolar Transistors with a New Hexagonal-Shaped Emitter," Shoji Yamahata et al.
Sadao Adachi et al, "Chemical Etching Characteristics of (001) InP", J. Electrochem. Soc.: Solid-State Science and Technology, vol. 128, No. 6, (Jun., 1981), pp. 1342-1349.
Matsuoka Yutaka
Yamahata Shoji
Mintel William
Nippon Telegraph and Telephone Corporation
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