Heterojunction bipolar transistor with base electrode having Sch

Details Heterojunction bipolar transistor with base electrode having Sch Heterojunction bipolar transistor with base electrode having Sch

1992-03-05

1994-07-19

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257477, 257473, H01L 29161, H01L 29205, H01L 29225

Patent

active

053311868

ABSTRACT:
A high-cut-off frequency, high-speed HBT is obtained by suppressing the diffusion of impurities to the utmost by lowering a heat treatment temperature in the step subsequent to the formation of a high concentration base layer. A base electrode for a base layer is made of a metal or an intermetallic compound which extends the emitter layer to reach at least a part of the base layer. The metal or intermetallic compound forms Schottky barrier with an emitter layer having a wide forbidden width ,and ohmic contacts with the base layer with a narrow forbidden band. The barrier potential of the Schottky junction formed between the intermetallic compound or metal and the emitter layer is higher than the diffusion potential of a pn junction between the base layer and the emitter layer.

REFERENCES:
patent: 4394673 (1983-07-01), Thompson et al.
patent: 4586071 (1986-04-01), Tiwari
patent: 4794440 (1988-12-01), Capasso et al.
patent: 5001534 (1991-03-01), Lunardi et al.
patent: 5150185 (1992-09-01), Yamada
patent: 5177583 (1993-01-01), Endo et al.
Tu et al., "Low Schottky Barrier of Rare-Earth Silicide on n-Si," Applied Physics Letters, vol. 38, No. 8, (Apr. 15, 1981), pp. 626-628.
IEEE Elecron Device Lertters, vol. 10, No. 2, Feb. 1989, pp. 52-54, Si/Si.sub.1-x Ge.sub.x Heterojunction Bipolar Transistors Produced by Limited Reaction Processing, C. A. King et al.

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