Heterojunction bipolar transistor with ballast resistor

Details Heterojunction bipolar transistor with ballast resistor Heterojunction bipolar transistor with ballast resistor

1997-12-04

2000-06-27

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, 257582, 438312, H01L 31072, H01L 31109, H01L 310328, H01L 310336

Patent

active

060810033

ABSTRACT:
A heterojunction bipolar transistor is provided with a ballast resistor layer in an emitter layer which prevents the current amplification factor .beta. from decreasing. The n-GaAs carrier supply layer having a specified carrier concentration is formed between the ballast resistor layer and the n-AlGaAs layer.

REFERENCES:
patent: 4593457 (1986-06-01), Birrittella
patent: 5389554 (1995-02-01), Liu et al.
patent: 5468658 (1995-11-01), Bayraktaroglu
patent: 5721437 (1998-02-01), Twynam et al.
patent: 5859447 (1999-01-01), Yang et al.

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