Heterojunction bipolar transistor with a thin silicon emitter

Details Heterojunction bipolar transistor with a thin silicon emitter Heterojunction bipolar transistor with a thin silicon emitter

1990-10-09

1992-04-14

Hille, Rolf

357 35, 357 16, 357 59, H01L 2972, H01L 29161, H01L 2904

Patent

active

051052504

ABSTRACT:
A heterojunction bipolar transistor having a thin, lightly doped, silicon emitter disposed on a silicon-germanium base layer exhibits low emitter resistance and low emitter-base capacitance. The lightly doped silicon emitter maintains the bandgap differential between silicon-germanium and silicon. The silicon emitter is fabricated such that the silicon emitter will be substantially depleted at zero bias, resulting in low emitter-base resistance and emitter resistance.

REFERENCES:
patent: 5001534 (1991-03-01), Lunardi et al.
"Si/Si.sub.1-x Ge.sub.x Heterojunction Bipolar Transistors Produced by Limited Reaction Processing", by C. A. King et al., published in IEEE, Electron Device Letters, vol. 10, No. 2, on Feb. 1989, pp. 52-54.

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