Heterojunction bipolar transistor with a base layer that...

Details Heterojunction bipolar transistor with a base layer that... Heterojunction bipolar transistor with a base layer that...

2006-03-07

2006-03-07

Smoot, Stephen W. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Having graded composition

C257S198000, C257S592000

Reexamination Certificate

active

07009225

ABSTRACT:
A heterojunction bipolar transistor (HBT) with improved characteristics is provided. A III–V compound semiconductor having Bi added thereto is used for a base layer of a GaAs-based or InP-based HBT. For example, a GaAs-based HBT is formed by successively stacking a subcollector layer made of n+-GaAs, a collector layer made of n−-GaAs, a base layer made of p+-GaAsBi, an emitter layer made of n-InGaP, a first cap layer made of n-GaAs, and a second cap layer made of n+-InGaAs on a substrate 1 made of single crystal GaAs.

REFERENCES:
patent: 4847666 (1989-07-01), Heremans et al.
patent: 5565370 (1996-10-01), Jerome et al.
patent: 6417058 (2002-07-01), Richardson et al.
patent: 6815736 (2004-11-01), Mascarenhas
patent: 2002-134524 (2002-05-01), None

Affiliated with

Also associated with

Rating

Heterojunction bipolar transistor with a base layer that... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heterojunction bipolar transistor with a base layer that..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction bipolar transistor with a base layer that... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3540756