Heterojunction bipolar transistor with a base layer that...

Details Heterojunction bipolar transistor with a base layer that... Heterojunction bipolar transistor with a base layer that...

2005-08-30

2005-08-30

Smoot, Stephen W. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S201000, C257S592000

Reexamination Certificate

active

06936871

ABSTRACT:
A heterojunction bipolar transistor (HBT) with improved characteristics is provided. A III-V compound semiconductor having Bi added thereto is used for a base layer of a GaAs-based or InP-based HBT. For example, a GaAs-based HBT is formed by successively stacking a subcollector layer made of n+-GaAs, a collector layer made of n−-GaAs, a base layer made of p+-GaAsBi, an emitter layer made of n-InGaP, a first cap layer made of n-GaAs, and a second cap layer made of n+-InGaAs on a substrate1made of single crystal GaAs.

REFERENCES:
patent: 4847666 (1989-07-01), Heremans et al.
patent: 5565370 (1996-10-01), Jerome et al.
patent: 6417058 (2002-07-01), Richardson et al.
patent: 2002134524 (2002-05-01), None

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