Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1995-03-29
1998-03-31
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257198, 257557, H01L 310328, H01L 310336, H01L 2900
Patent
active
057341834
ABSTRACT:
A semiconductor device is provided with an emitter area and a collector area of a first conductive type and a base area of a second conductive type, arranged in a horizontal structure. The semiconductor device comprises an area constituting at least a part of the base area, being in contact with a part of the base area at least positioned between the emitter and collector areas, and having a narrower forbidden band than in the base area.
REFERENCES:
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patent: 4889824 (1989-12-01), Selle et al.
patent: 4987468 (1991-01-01), Thornton
1989 Symposium On VLSI Technology, G.L. Patton et al May 22-25, 1989; pp. 95-96; "SiGc Polyemitter HBT".
Warnock et al; "Boron Doped Emitter For High Performance . . . "; Proceedings of 1989 Bipolar circuits and Technology; Sep. 1989; pp. 186-189.
Van Halen et al; "High Gain Bipolar Transistors With Polysilicon Tunnel Junction Emitter Contacts"; IEEE Transactions On Electron Devices, vol. ED-32, No. 7; Jul. 1985.
Warnock et al; "Boron Doped Emitter For High Performance Vertical PNP Transistors" Proceedings of the 1989 Bipolar Circuits and Technology; Sep. 1989; pp. 186-189.
IEEE Transactions On Electron Devices, vol. 36, No. 10, Oct. 1989, pp. 2156-2164, R.L. Thorton et al., "Demonstration and Properties of a Planar Heterojunction Bipolar Transistor with Lateral Current Flow".
Thornton et al., "Demonstration and Properties of a Planar Heterojunction Bipolar Transistor with Lateral Current Flow", IEEE Transaction of Electron Devices, vol. 36, No. 10, Oct. 1989, pp. 2156-2164.
Harame et al., "High-Performance Si and SeGe-Base PNP Transistors", International Electron Devices Meeting (IEDM) 11-14, Dec. 1988, pp. 889-891.
Moravvej-Farshi et al., "Improvements in Current Gain and Breakdown Voltage of Silicon MIS Heterojunction Emitter Transistors", I.E.E.E. Electron Device Letters, vol. EDL-7, No. 11, Nov. 1986, pp. 632-634.
P. Van Halen et al., "High-Gain Bipolar Transistors With Polysilicon Tunnel Junction Emitter Contacts," IEEE Transactions of Electron Devices, vol. ED-32, No. 7, Jul. 1985, pp. 1307-1313.
Canon Kabushiki Kaisha
Fahmy Wael
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