Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1997-09-29
1999-06-15
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257200, H01L 2970, H01L 29732
Patent
active
059124814
ABSTRACT:
A heterojunction bipolar transistor (20) is provided with a silicon (Si) base region (34) that forms a semiconductor junction with a multilayer emitter (38) having a thin gallium arsenide (GaAs) emitter layer (36) proximate the base region (34) and a distal gallium phosphide emitter layer (40). The GaAs emitter layer (36) is sufficiently thin, preferably less than 200 .ANG., so as to be coherently strained.
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El-Sharawy El-Badawy Amien
Hashemi Majid M.
Chaudhuri Olik
Coleman William David
Gresham Lowell W.
Meshkow Jordon M.
National Scientific Corp.
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