Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Reexamination Certificate
2006-04-18
2006-04-18
Tran, Mai-Huong (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
C257S198000, C257S631000, C257S636000, C257S197000, C438S312000, C438S317000
Reexamination Certificate
active
07030462
ABSTRACT:
A Heterojunction Bipolar Transistor, HBT, (100) containing a collector layer (104), a base layer (105) and an emitter layer (106) is constructed such that the collector layer (104), the base layer (105) and the emitter layer (106) have different lattice constants of ac, aband aerespectively, and a value of abbetween values of acand ae(in other words, the values of ac, aband aesatisfy a relationship of ac>ab>aeor ac<ab<ae). According to the present invention, the HBT having a high reliability can be realized without altering the existing apparatus and steps for producing the HBT extensively.
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Sharp Kabushiki Kaisha
Tran Mai-Huong
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