Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2006-03-14
2006-03-14
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S198000
Reexamination Certificate
active
07012288
ABSTRACT:
The safe-operating area (SOA) in a heterojunction bipolar transistor (HBT) is improved by providing a collector region in the transistor having a graded (uniformly or stepped) doping between the base region and the underlying subcollector region with the collector doping being lower near the base and higher near the subcollector and with the collector doping being less than the doping of the subcollector. The non-uniformly doped collector reduces Kirk effect induced breakdown when collector current increases.
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S. Wolf, “Silicon Processing for the VLSI Era, vol. 2—Process Integration,” Lattice Press, Sunset Beach, CA (1990), pp. 467-468.
Fullowan et al., “Improved Breakdown of AllnAs/InGaAs Heterojunction Bipolar Transistors”, Electronics Letters, vol. 27, pp. 2340-2341, Dec. 1991.
Hassan et al., “Control of Current-Mode Second Breakdown in Transistors Through Use of Double-Graded Collectors”, Solid-State Electronics, vol. 33, No. 10, pp. 1217-1221, 1990.
Pfost et al., “Optimization of the Collector Profile of InGaP/GaAs HBTs for Increased Robustness”, 25thIEEE GaAsIC Symposium, Nov. 9-12, pp. 115-118, 2003.
Chau Hin Fai
Chen Yan
Dunnrowicz Clarence John
Lee Chien Ping
Lin Barry Jia-Fu
Beyer Weaver & Thomas LLP
Owens Douglas W.
WJ Communications, Inc.
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