Heterojunction bipolar transistor having mono crystalline SiGe i

Details Heterojunction bipolar transistor having mono crystalline SiGe i Heterojunction bipolar transistor having mono crystalline SiGe i

1996-03-04

1998-11-10

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257518, 257526, 257586, 257588, 257592, 257 19, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

058348000

ABSTRACT:
A heterojunction bipolar transistor in an integrated circuit has intrinsic and extrinsic base portions. The intrinsic base portion substantially comprises epitaxial silicon-germanium alloy. The extrinsic base portion substantially comprises polycrystalline material, and contains a distribution of ion-implanted impurities. An emitter overlies the intrinsic base portion, and a spacer at least partially overlies the emitter. The spacer overhangs the extrinsic base portion by at least a distance characteristic of lateral straggle of the ion-implanted impurities.

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