Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1994-04-07
1996-04-16
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257191, 257198, H01L 310328, H01L 310336, H01L 31072
Patent
active
055085369
ABSTRACT:
The present invention provides a heterojunction bipolar transister includes: a collector layer, a base layer, an emitter layer, a transition layer formed between the base layer and the emitter layer, a collector electrode connected to the collector layer, a base electrode connected to the base layer, and an emitter electrode connected to the emitter layer, wherein the emitter layer and the transition layer are formed of a composition including elements forming the base layer and at least one element different from the elements forming the base layer, a composition of the different element in the transition layer at the emitter side is substantially equal to that of the emitter layer, a composition of the different element in the transition layer at the base side is smaller than that of the emitter side and varies abruptly towards the base layer, and the composition of the transition layer gradingly varies from the base side to the emitter side.
REFERENCES:
patent: 4728616 (1988-03-01), Ankri et al.
patent: 4768074 (1988-08-01), Yoshida et al.
patent: 5162243 (1992-11-01), Streit et al.
Chung-Chang Wu et al. "High Gain Npn AlGaAs/GaAs Heterojunction Bipolar Transisitor Prepared by Molecular Beam Epitaxy", Jpn. J. Appl. Phys., Part 2, vol. 31 (1992), pp. L 385-L 387.
K. Ikossi-Anastasiou et al. "Low-Temperature Characterization of High-Current-Gain Graded-Emitter AlGaAs/GaAs Narrow-Base Heterojunction Bipolar Transistor", IEEE Electron Device Letters, vol. 13 (1992), pp. 414-417.
Enrico Zanoni, "Negative Base Current and Impact Ionization Phenomena in AlGaAs/GaAs HBT's", IEEE Electron Device Letters, vol. 13, No. 5, May 1992, pp. 253-255.
D. L. Miller, et al., "(GaAl) As/GaAs Heterojunction Bipolar Transistors With Graded Composition in the Base", Electronics Letters, vol. 19, No. 10 May 1983, pp. 367-368.
Kinosada Toshiaki
Kishimoto Katsuhiko
Twynam John K.
Conlin David G.
Fournier Kevin J.
Loke Steven H.
Sharp Kabushiki Kaisha
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