Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure
Patent
1998-10-05
2000-04-18
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Plural non-isolated transistor structures in same structure
257573, 257586, 257618, 257623, 257625, 257626, 257707, 257723, 257724, 257725, H01L 27082, H01L 27102, H01L 2970
Patent
active
060518715
ABSTRACT:
A heterojunction bipolar transistor has a mesa including collector 604, base 603, and emitter 602 layers. The mesa has first and second sidewalls 606. An improved heat dissipation structure comprises a layer of electrically insulative and thermally conductive material 607 disposed on one of the sidewalls. A thermal path metal 600 is electrically connected to the emitter 602 and is disposed on the layer of electrically insulative and thermally conductive material 607. The thermal path metal 600 extends from the emitter 602 to the substrate 608 providing for efficient dissipation of heat that is generated by the HBT device.
REFERENCES:
patent: 5672904 (1997-09-01), Miyata et al.
patent: 5719433 (1998-02-01), Delage et al.
patent: 5834800 (1998-11-01), Jalali-Farahani et al.
1995 IEEE MTT-S Digest; WE2A-5: A Scalable MMIC-Compatible Power HBT. G. Jackson, D. Teeter, D. Bradford, and M. Cobb, pp. 457-460.
DeLaCruz Javier Andres
Henderson Gregory Newell
O'Keefe Matthew F.
Yun Yong-Hoon
Zhang Xiangdong
Saadat Mahshid
The Whitaker Corporation
Warren Matthew E.
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