Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1997-05-09
1999-01-12
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257198, 257200, 257201, H01L 310328, H01L 310536, H01L 31092
Patent
active
058594477
ABSTRACT:
An HBT device having heterostructure ballasting emitter is disclosed. The heterostructure ballasting emitter includes an n-type emitter setback layer on a base layer and a wide-gap ballasting emitter layer on the setback layer. The heterostructure ballasting emitter is made so that the band gap of the emitter setback layer is equal to or larger than that of the base layer and the band gap of the ballasting emitter layer is larger than that of the emitter setback layer. The heterostructure of the emitter setback layer and the ballasting emitter layer serves as the ballast. By changing the value of the valance offset between the emitter setback layer and the ballasting emitter layer, the temperature dependence of the current gain becomes adjustable. As a consequence, the present invention overcomes hurdles posed by the current gain collapse and a negative differential resistance and improves the use of the HBTs in microwave power applications.
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Yang Edward S.
Yang Yue-Fei
Nguyen Cuong Quang
Thomas Tom
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