Heterojunction bipolar transistor having base structure for impr

Details Heterojunction bipolar transistor having base structure for impr Heterojunction bipolar transistor having base structure for impr

1993-06-08

1994-06-14

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

257591, 257593, 257607, H01L 27082, H01L 27102, H01L 3111, H01L 29167

Patent

active

053213025

ABSTRACT:
A heterojunction bipolar transistor has an n-type emitter layer of aluminum gallium arsenide and a beryllium doped base layer forming a heterojunction together with the n-type emitter layer, and the base layer is associated with a heavily doped carbon doped base region so that the beryllium content is restricted below the critical value for preventing the emitter layer from undesirable beryllium diffusion.

REFERENCES:
patent: 5001534 (1991-03-01), Lunardi et al.
patent: 5073812 (1991-12-01), Shimura
patent: 5077231 (1991-12-01), Plumton et al.
1984 IEEE International Solid-State Circuits Conference, pp. 50, 51.
IEEE Electron Device Letters, vol. 9, No. 8, Aug. 1988, pp. 422-424.
Electronics Letters Sep. 10, 1987 vol. 23, No. 19, pp. 989, 990.
IEEE Transactions on Electron Devices, vol. 36, No. 10, Oct. 1989, pp. 2032-2042.

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