Heterojunction bipolar transistor having an emitter region with

Details Heterojunction bipolar transistor having an emitter region with Heterojunction bipolar transistor having an emitter region with

1987-10-13

1988-08-30

James, Andrew J.

357 4, 357 16, H01L 2972

Patent

active

047680741

ABSTRACT:
A heterojunction bipolar transistor comprises a base region of a first conductivity type formed of a first kind of semiconductor material, an emitter region of a second conductivity type formed of a second kind of semiconductor material which has a band gap greater than that of the first kind of semiconductor material and a smaller electron affinity, a transition region formed between the base region and the emitter region, and a collector region formed adjacent to the base region. The transition region is formed of a plurality of semiconductor layers such that band gaps sequentially increase in a stepped fashion from the semiconductor layer adjacent to the base region toward the semiconductor layer adjacent to the emitter region. The transition region is formed of a semiconductor material having an intermediate composition between the composition of the first kind of semiconductor material and that of the second kind of semiconductor material.

REFERENCES:
patent: 4053920 (1977-10-01), Enstrom
patent: 4117504 (1978-09-01), Maslov et al.
patent: 4558336 (1985-12-01), Chang et al.
Hovel, H. J., "Graded Bandgap Heterojunction Bipolar Transistor" IBM Tech. Discl. Bull., vol. 22, No. 813, Jan. 1980, p. 3875.
H. Kroemer: "Hetrostructure Bipolar Transistors and Integrated Circuits", Proc. IEEE vol. 70, pp. 13-25, 1982.
Applied Physics Letters, vol. 43, No. 10, Nov. 1983, pp. 949-951, American Institute of Physics, New York, US; J. R. Hayes, et al.: "Optimum Emitter Grading for Heterojunction Bipolar Transistors" *FIG. 3a; p. 950, col. 2, lines 6-13*,

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