Heterojunction bipolar transistor having an emitter layer...

Details Heterojunction bipolar transistor having an emitter layer... Heterojunction bipolar transistor having an emitter layer...

2007-11-27

2007-11-27

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S192000, C257S194000, C257S195000, C257S198000

Reexamination Certificate

active

10980254

ABSTRACT:
The present invention aims at providing a heterojunction bipolar transistor having improved breakdown voltage on operation for high power output, and includes: a GaAs semiconductor substrate100; an n+-type GaAs sub-collector layer110; an n-type GaAs collector layer120; a p-type GaAs base layer130; an emitter layer140; an n-type GaAs emitter cap layer150; and an n-type InGaAs emitter contact layer160.The emitter layer140has a multilayer structure including an n-type or non-doped first emitter layer141and an n-type second emitter layer142which are laminated in sequence. The first emitter layer141is made of a semiconductor material including Al, while the second emitter layer142is made of InxGa1-xP (0<x<1).

REFERENCES:
patent: 5859447 (1999-01-01), Yang et al.
patent: 2002/0145153 (2002-10-01), Yamada et al.
patent: 2003/0222278 (2003-12-01), Liu et al.
patent: 5-36713 (1993-02-01), None
patent: 8-241896 (1996-09-01), None

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