Heterojunction bipolar transistor having a graded-composition ba

Details Heterojunction bipolar transistor having a graded-composition ba Heterojunction bipolar transistor having a graded-composition ba

1995-12-01

1998-09-29

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, 257191, H01L 29737, H01L 29205

Patent

active

058148434

ABSTRACT:
A HBT comprises a collector layer, a base layer and an emitter layer overlying a semi-insulating GaAs substrate. The base layer is composed of graded-composition GaAs.sub.1-x P.sub.x wherein x is 0 at the interface between the base layer and the collector layer, linearly increases as viewed toward the emitter layer and is 0.15 at the interface between the base layer and the emitter layer. The graded-composition of GaAs base layer provides a high carbon dosage, a high current gain and a high cut-off frequency without rise in the offset voltage.

REFERENCES:
patent: 3111611 (1963-11-01), Hunter
patent: 3211970 (1965-10-01), Christian
patent: 4719155 (1988-01-01), Matsumoto
patent: 5001534 (1991-03-01), Lunardi et al.
patent: 5371389 (1994-12-01), Matsuno et al.
R. H. Saul, "Effect of a GaAs1-xPx Transition Zone on the Perfection of GaP Crystals Grown by Deposition onto GaAs Substrates," Journal of Applied Physics, vol. 40, No. 8, Jul. 1969, pp. 3273-3279.
Sze, S. M. "Semiconductor Devices," 1985 p. 268.

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