Metal treatment – Stock – Ferrous
Patent
1987-01-20
1987-12-29
Edlow, Martin H.
Metal treatment
Stock
Ferrous
357 34, 357 61, 148DIG11, 148DIG58, 148DIG56, 148DIG67, 148DIG72, H01L 29161, H01L 2972, H01L 2920
Patent
active
047164450
ABSTRACT:
The heterojunction bipolar transistor has a structure of wide band-gap transistor and comprises a collector region having an N-type GaAs layer, a base region having a P-type germanium layer formed on the N-type GaAs layer, and an emitter region having an N-type semiconductor layer of mixed crystal of silicon and germanium formed on the P-type germanium layer. The mixed crystal of the N-type semiconductor layer may have a uniform distribution of silicon or a graded distribution of silicon in which a content of silicon is zero at the surface facing the P-type germanium layer and is continuously increased with distance from the surface facing the P-type germanium layer.
REFERENCES:
patent: 3057762 (1962-10-01), Gans
patent: 3275906 (1966-09-01), Matsukura et al.
patent: 3766447 (1973-10-01), Mason
patent: 4119994 (1978-10-01), Jain et al.
patent: 4396931 (1983-08-01), Dumke et al.
patent: 4593305 (1986-06-01), Kurata et al.
H. Kroemer, "Heterostructure Bipolar Transistors and Integrated Circuits", Proceedings of the IEEE, vol. 70, No. 1, Jan. 1982, pp. 13-25.
"OYO BUTURI", Japanese Society of Applied Physics, vol. 54, No. 11, pp. 1192-1197, 7/15/85.
Edlow Martin H.
Featherstone D.
NEC Corporation
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