Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2005-03-22
2005-03-22
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S077000, C257S198000
Reexamination Certificate
active
06870204
ABSTRACT:
A bipolar transistor includes a collector that is selected from the group SiC and SiC polytypes (4H, 6H, 15R, 3C . . . ), a base that is selected from the group Si, Ge and SiGe, at least a first emitter that is selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon, and at least a second emitter that is selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon. Direct-wafer-bonding is used to assemble the bipolar transistor. In an embodiment the bandgap of the collector, the bandgap of the at least a first emitter and the bandgap of the at least a second emitter are larger than the bandgap of the base.
REFERENCES:
patent: 2524033 (1950-10-01), Bardeen
patent: 2569347 (1951-09-01), Shockley
patent: 2918396 (1959-12-01), Hall
patent: 4945394 (1990-07-01), Palmour et al.
patent: 4985742 (1991-01-01), Pankove
patent: 5047365 (1991-09-01), Kawanaka et al.
patent: 5272096 (1993-12-01), de Fresart et al.
patent: 5350699 (1994-09-01), Nii
patent: 5378901 (1995-01-01), Nii
patent: 5378921 (1995-01-01), Ueda
patent: 5441911 (1995-08-01), Malhi
patent: 5557118 (1996-09-01), Hashimoto
patent: 5610411 (1997-03-01), Takasu
patent: 5656514 (1997-08-01), Ahlgren et al.
patent: 5864169 (1999-01-01), Shimura et al.
patent: 5923058 (1999-07-01), Agarwal et al.
patent: 6049098 (2000-04-01), Sato
patent: 6313488 (2001-11-01), Bakowski et al.
patent: 6329675 (2001-12-01), Singh et al.
patent: 6750484 (2004-06-01), Lippert et al.
patent: 20030071281 (2003-04-01), Lippert et al.
patent: 2-3931 (1990-01-01), None
patent: 3-104123 (1991-05-01), None
patent: 03104123 (1991-05-01), None
patent: 5-235016 (1993-09-01), None
patent: 5-267321 (1993-10-01), None
Integrated Pressure Sensor Using Silicon and Germanium Bipolar Transistors, Apr. 1, 1991, IBM Technical Disclosure Bulletin NN9104456, pp. 456-457.
Pankove Jacques Isaac
Torvik John Tarje
Astralux, Inc.
Eckert George
Sheridan & Ross P.C.
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