Heterojunction bipolar transistor and the manufacturing method t

Details Heterojunction bipolar transistor and the manufacturing method t Heterojunction bipolar transistor and the manufacturing method t

1991-03-25

1992-08-18

Jackson, Jr., Jerome

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357 16, 357 47, 357 58, 365155, H01L 29205, H01L 2972

Patent

active

051403994

ABSTRACT:
A heterojunction bipolar transistor formed as a collector top or emitter top type. This heterojunction bipolar transistor can operate at high speed and can be fabricated into a semiconductor integrated circuit with ease. The manufacturing method thereof is also disclosed.

REFERENCES:
patent: 4314359 (1982-02-01), Kato et al.
patent: 4428111 (1984-01-01), Swartz
patent: 4775882 (1988-10-01), Miller et al.
patent: 4779127 (1988-10-01), Honjo
IEEE Transactions On Electron Devices, vol. ED-32, No. 11, Nov. 1985, pp. 2345-2377.

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