Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2005-04-19
2005-04-19
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S015000, C257S198000, C257S593000
Reexamination Certificate
active
06881988
ABSTRACT:
A heterojunction bipolar transistor has a raised breakdown voltage and restrains the rising characteristic of IC-VCEcharacteristic from degrading. The collector region includes first, second, and third collector layers of semiconductor. The first collector layer is made of a doped or undoped semiconductor in such a way as to contact the sub-collector region. The second collector layer is made of a doped or undoped semiconductor having a narrower band gap than the first collector layer in such a way as to contact the base region. The third collector layer has a higher doping concentration than the second collector layer in such a way as to be located between or sandwiched by the first collector layer and the second collector layer.
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Azuma Koji
Kurosawa Naoto
Niwa Takaki
Shimawaki Hidenori
Hayes & Soloway P.C.
Hu Shouxiang
NEC Compound Semiconductor Devices Ltd.
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