Heterojunction bipolar transistor and process for fabricating sa

Details Heterojunction bipolar transistor and process for fabricating sa Heterojunction bipolar transistor and process for fabricating sa

1988-10-20

1990-05-08

James, Andrew J.

357 16, 357 47, 357 49, H01L 2972, H01L 29161, H01L 2712

Patent

active

049242830

ABSTRACT:
A heterojunction bipolar transistor includes a base layer and a wide bandgap emitter layer. A portion of the base layer is exposed, a base electrode is formed thereon and the active region of the emitter-base junction is limited inside a semiconductor body. As a result, surface recombination current generation of the peripheral region of the junction is prevented and the emitter efficiency is improved.

REFERENCES:
patent: 4484211 (1984-11-01), Takemoto et al.
patent: 4573064 (1986-02-01), McLevige et al.
patent: 4593305 (1986-06-01), Kurata et al.
patent: 4672404 (1987-06-01), Ankri et al.
International Electron Devices Meeting, 5th-7th, Dec., 1983, Washington, D.C., "Double Heterojunction GaAs-GaAlAs Bipolar Transistors Grown by MOCVD for Emitter Coupler Logic Circuit", by Dubon et al., pp. 689-691.
IEEE Electron Device Letters, vol. EDL-5, No. 8, Aug., 1984, "GaAs/(Ga,Al) as Heterojunction Bipolar Transistors with Buried Oxygen-Implanted Isolation Layers", by Asbeck et al., pp. 310-312.
IEEE Electron Device Letters, vol. EDL-4, No. 4, Apr., 1983, "Application of Thermal Pulse Annealing to Ion-Implanted GaAlAs/GaAs Heterojunction Bipolar Transistors", by Asbeck et al., pp. 81-84.
IEEE Electron Device Letters, vol. EDL-3, No. 12, Dec., 1982, "GaAs/GaAlAs Heterojunction Bipolar Transistors with Cutoff Frequencies Above 10 GHz", by Asbeck et al., pp. 366-368.

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