Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2008-05-06
2008-05-06
Chaudhari, Chandra (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257SE29033, C438S312000, C438S320000
Reexamination Certificate
active
07368764
ABSTRACT:
A heterojunction bipolar transistor and a method of making a heterojunction bipolar transistor. The heterojunction bipolar transistor includes: a regrown emitter region; an intrinsic base region forming a junction with the regrown emitter region; and an extrinsic base region separated from the regrown emitter region. The thickness of the extrinsic base region is greater than the thickness of the intrinsic base region.
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Chow David
Elliott Kenneth Robert
Thomas, III Stephen
Chaudhari Chandra
HRL Laboratories LLC
Ladas & Parry
Reames Matthew L.
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