Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1992-12-21
1995-01-03
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257197, 257198, 257201, H01L 3300, H01L 2714, H01L 3100
Patent
active
053789016
ABSTRACT:
A heterojunction bipolar transistor includes a 3c-silicon carbide crystal layer of a first conductive-type, a silicon crystal layer of a second conductive-type and another 3c-silicon carbide crystal layer which are sequentially formed to define a stair-like configuration on a substrate. The two 3c-silicon carbide crystal layers serve as a collector region and an emitter region, respectively while the silicon crystal layer of a second conductive-type serve as a base region. Each step of the stair-like configuration is formed thereon with an electrode for the respective region. In the above-mentioned transistor, an injection of positive holes or electrons which move from the base region to the collector region does not arise, hence only an amount of an electric accumulation in the base region determines the operation speed of the device.
REFERENCES:
patent: 5144398 (1992-09-01), Morithita
patent: 5247192 (1993-09-01), Nii
Chang et al, `GaSb-InAs-GaSb p-n-p heterojunction transistors. . . `, IBM Tech vol. 22 No. 7, Dec. 79, p. 2952.
Sasaki et al `. . . Amorphous SiC:4 Emitter Heterojunction Bipolar Transistor`, IEEE Elec Device Lttrs, vol EDL6 No 6, Jun. 88, pp. 724-725.
Jackson Jerome
Meier Stephen D.
Rohm & Co., Ltd.
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