Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2006-04-06
2008-11-11
Cao, Phat X (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257SE29188
Reexamination Certificate
active
07449729
ABSTRACT:
On a high-concentration n-type first sub-collector layer, a high-concentration n-type second sub-collector layer made of a material having a small bandgap, an i-type or low-concentration n-type collector layer, a high-concentration p-type base layer, an n-type emitter layer made of a material having a large bandgap, a high-concentration n-type emitter cap layer, a high-concentration n-type emitter contact layer made of a material having a small bandgap are sequentially stacked. From the emitter contact layer, an interconnection also serving as an emitter electrode is extended. From the emitter layer or the base layer, an interconnection also serving as a base electrode is extended. From the second sub-collector layer, an interconnection also serving as a collector electrode is extended.
REFERENCES:
patent: 6683332 (2004-01-01), Shinozaki et al.
patent: 2005/0199909 (2005-09-01), Murayama et al.
patent: 2001-308103 (2001-11-01), None
Daisuke Ueda et al., “Developing New Epoch in Information Communication—High-frequency optical semiconductor device”, The Institute of Electronics, Information and Communication Engineers, Mar. 15, 2001, pp. 51 to 53 (5 pages with Translation).
Miyajima Kenichi
Miyamoto Hirotaka
Murayama Keiichi
Cao Phat X
McDermott Will & Emery LLP
Panasonic Corporation
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