Heterojunction bipolar transistor and method for fabricating...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor

Reexamination Certificate

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C257SE29188

Reexamination Certificate

active

07449729

ABSTRACT:
On a high-concentration n-type first sub-collector layer, a high-concentration n-type second sub-collector layer made of a material having a small bandgap, an i-type or low-concentration n-type collector layer, a high-concentration p-type base layer, an n-type emitter layer made of a material having a large bandgap, a high-concentration n-type emitter cap layer, a high-concentration n-type emitter contact layer made of a material having a small bandgap are sequentially stacked. From the emitter contact layer, an interconnection also serving as an emitter electrode is extended. From the emitter layer or the base layer, an interconnection also serving as a base electrode is extended. From the second sub-collector layer, an interconnection also serving as a collector electrode is extended.

REFERENCES:
patent: 6683332 (2004-01-01), Shinozaki et al.
patent: 2005/0199909 (2005-09-01), Murayama et al.
patent: 2001-308103 (2001-11-01), None
Daisuke Ueda et al., “Developing New Epoch in Information Communication—High-frequency optical semiconductor device”, The Institute of Electronics, Information and Communication Engineers, Mar. 15, 2001, pp. 51 to 53 (5 pages with Translation).

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