Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2005-01-18
2005-01-18
Nguyen, Tuan H. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S587000, C257S720000
Reexamination Certificate
active
06844575
ABSTRACT:
A heterojunction bipolar transistor is fabricated by laminating and emitter layer, a base layer and a collector layer on a top surface of a semiconductor substrate, forming a via hole through the emitter layer, the base layer, the collector layer and the substrate at a specific depth, and providing a heat sink layer made of a metal on a rear surface of the substrate. A surface electrode of the emitter layer and the heat sink layer are connected to each other by a metal wiring line running through within the via hole, thereby improving the heat radiation and reducing the emitter inductance.
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Nguyen Tuan H.
Sharp Kabushiki Kaisha
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