Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having at least four external electrodes
Reexamination Certificate
2010-09-10
2011-12-06
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having at least four external electrodes
C257S196000, C257S582000, C257SE29176
Reexamination Certificate
active
08072001
ABSTRACT:
A heterojunction bipolar transistor with InGaP as the emitter layer and capable of both reliable electrical conduction and thermal stability wherein a GaAs layer is inserted between the InGaP emitter layer and AlGaAs ballast resistance layer, to prevent holes reverse-injected from the base layer from diffusing and reaching the AlGaAs ballast resistance layer.
REFERENCES:
patent: 6507089 (2003-01-01), Azuma et al.
patent: 6545340 (2003-04-01), Higgs et al.
patent: 6611008 (2003-08-01), Twynam et al.
patent: 6768140 (2004-07-01), Hong et al.
patent: 7045877 (2006-05-01), Umemoto et al.
patent: 2002/0088993 (2002-07-01), Twynam et al.
patent: 2005/0156194 (2005-07-01), Ohbu et al.
patent: 2007/0164316 (2007-07-01), Ohbu et al.
patent: 2010/0327980 (2010-12-01), Ohbu et al.
patent: 9-102502 (1997-04-01), None
patent: 2000-260784 (2000-09-01), None
patent: 2003-23012 (2003-01-01), None
patent: 2004-6531 (2004-01-01), None
patent: WO98/53502 (1998-11-01), None
Kurokawa Atsushi
Kusano Chushiro
Ohbu Isao
Umemoto Yasunari
Mattingly & Malur, PC
Renesas Electronics Corporation
Taylor Earl
Vu David
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