Heterojunction bipolar transistor and method for...

Details Heterojunction bipolar transistor and method for... Heterojunction bipolar transistor and method for...

2010-09-10

2011-12-06

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Having at least four external electrodes

C257S196000, C257S582000, C257SE29176

Reexamination Certificate

active

08072001

ABSTRACT:
A heterojunction bipolar transistor with InGaP as the emitter layer and capable of both reliable electrical conduction and thermal stability wherein a GaAs layer is inserted between the InGaP emitter layer and AlGaAs ballast resistance layer, to prevent holes reverse-injected from the base layer from diffusing and reaching the AlGaAs ballast resistance layer.

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