Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Reexamination Certificate
2007-08-14
2007-08-14
Ho, Tu Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
C257S164000, C257S173000, C438S133000
Reexamination Certificate
active
11019270
ABSTRACT:
A heterojunction bipolar transistor with InGaP as the emitter layer and capable of both reliable electrical conduction and thermal stability wherein a GaAs layer is inserted between the InGaP emitter layer and AlGaAs ballast resistance layer, to prevent holes reverse-injected from the base layer from diffusing and reaching the AlGaAs ballast resistance layer.
REFERENCES:
patent: 6507089 (2003-01-01), Azuma et al.
patent: 6611008 (2003-08-01), Twynam et al.
patent: WO98/53502 (1998-11-01), None
Kurokawa Atsushi
Kusano Chushiro
Ohbu Isao
Umemoto Yasunari
Ho Tu Tu
Mattingly, Stanger Malur & Brundidge PC
Renesas Technology Corp.
Taylor Earl
LandOfFree
Heterojunction bipolar transistor and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Heterojunction bipolar transistor and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction bipolar transistor and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3868271