Heterojunction bipolar transistor and manufacturing method...

Details Heterojunction bipolar transistor and manufacturing method... Heterojunction bipolar transistor and manufacturing method...

2007-04-10

2007-04-10

Hoang, Quoc (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S587000, C257SE21371, C438S235000, C438S508000

Reexamination Certificate

active

11213870

ABSTRACT:
In the method for manufacturing a heterojunction bipolar transistor, a collector contact layer, a collector layer, a base layer, a base protection layer, an emitter layer, an emitter contact layer, and a WSi layer are sequentially formed on a substrate. A resist pattern is then formed on the WSi layer, and the WSi layer is patterned by using the resist pattern as a mask. Thereafter, the emitter contact layer and the emitter layer are sequentially removed by ICP (Inductively Coupled Plasma) dry etching by using the resist pattern as a mask.

REFERENCES:
patent: 6683332 (2004-01-01), Shinozaki et al.
patent: 6803248 (2004-10-01), Sadaka et al.
patent: 2005/0035370 (2005-02-01), Chen
patent: 5-109756 (1993-04-01), None
patent: 11-186278 (1999-07-01), None

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