Heterojunction bipolar transistor and integrated circuit device

Details Heterojunction bipolar transistor and integrated circuit device Heterojunction bipolar transistor and integrated circuit device

1994-05-11

1996-09-17

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257187, 257198, H01L 310328

Patent

active

055571174

ABSTRACT:
A heterojunction bipolar transistor includes a collector contact layer constituted by a high-concentration first semiconductor layer of a first conductivity type formed on a semiconductor substrate, a collector region stacked on the collector contact layer, a base layer constituted by a fifth semiconductor layer of a second conductivity type formed on the collector region, and an emitter layer constituted by a semiconductor layer of the first conductivity type formed on the base layer. The collector region is constituted by a second semiconductor layer, a third semiconductor layer of the second conductivity type having an impurity concentration higher than that of the second semiconductor layer, and a fourth semiconductor layer of the first conductivity type having a band gap energy higher than that of each of the first and second semiconductor layers and an impurity concentration higher than that of the second semiconductor layer, and the fourth semiconductor layer and lower than that of the first semiconductor layer, the third semiconductor layer, and the second semiconductor layer are sequentially formed on the collector contact layer in an order named.

REFERENCES:
patent: 5019890 (1992-05-01), Ishibashi et al.
patent: 5150185 (1992-09-01), Yamada
patent: 5401999 (1995-03-01), Bayraktaroglu
K. D. Pedrotti et al., "Monolithic ultrahigh-speed GaAs HBT optical integrated receivers", Tsch, Dig. 1991 GaAs IC symp., pp. 205-208.
K. Kurishima et al., "High-speed InP/InGaAs double-heterostructure bipolar transistors with suppressed collector current blocking", Appl. Phys. Lett. 62 (19), 10 May 1993, pp. 2372-2374.
Sixth International Conference on Indium Phosphide and Related Materials, Mar. 27-31, 1994, Sponsored by the IEEE Lasers and Electro-Optics Society et al., "Novel InP/InGaAs Double-Heterojunction Bipolar Transistors Suitable for High-Speed IC's and OEIC's" by Yutaka Matsuoka et al., pp. 555-558.

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