Heterojunction bipolar transistor

Details Heterojunction bipolar transistor Heterojunction bipolar transistor

1990-07-09

1991-08-20

Munson, Gene M.

357 34, H01L 29205, H01L 2972

Patent

active

050418823

ABSTRACT:
A heterojunction bipolar transistor comprises an emitter layer made of a material having a band gap larger than that of a base layer and which includes a region subjected to a composition variation so that the band gap is made gradually smaller from inside of the emitter layer into inside of the base layer toward a base/collector junction direction. In the transistor, the emitter layer is made of an InP composition, the base layer is made of a gaInAsP composition which is lattice matched with the InP composition, and a composition ratio .beta. of P to As in a base/emitter junction satisfies an inequality relationship 0.3.ltoreq..beta..ltoreq.0.7.

REFERENCES:
patent: 4924283 (1990-05-01), Ohshima
patent: 4933732 (1990-06-01), Katoh et al.
patent: 4958208 (1990-09-01), Tanaka
H. Kroemer, "Heterostructure Bipolar Transistors and Integrated Circuits", Proceedings of the IEEE, vol. 70, No. 1, Jan. 1982, pp. 13-25.
Y.-K. Chen et al., "Subpicosecond InP/InGaAs Heterostructure Bipolar Transistors", IEEE Electron Device Letters, vol. 10, No. 6, Jun. 1989, pp. 267-269.
R. Katoh et al., "Quest for Higher Performance HBTs, AlInAs/GaInAs vs. InP/GaInAs: Monte Carlo Study", Extended Abstracts of the 21st Conference on Solid State Devices and Materials, 1989, pp. 293-296.

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