Heterojunction bipolar transistor

Details Heterojunction bipolar transistor Heterojunction bipolar transistor

1990-02-20

1991-12-17

James, Andrew J.

357 16, 357 41, 357 67, 357 88, H01L 2972, H01L 29161, H01L 2348, H01L 2702

Patent

active

050738127

ABSTRACT:
A semiconductor device includes an n.sup.+ type InGaAs layer at a surface of the device, a refractory metal emitter electrode making ohmic contact to the n.sup.+ layer without alloying, and an externally accessible base region produced in the neighborhood of the emitter electrode by a diffusion using the emitter electrode and an insulating side wall film as a diffusion mask.

REFERENCES:
patent: 4924283 (1990-05-01), Ohshima
patent: 4929997 (1990-05-01), Honjo et al.
patent: 4933732 (1990-06-01), Katoh et al.
patent: 4958208 (1990-09-01), Tanaka
patent: 4982244 (1991-01-01), Kapoor
Nagata et al., "Self-Aligned . . . Cap Layer", IEEE Transactions on Electron Devices, vol. ED-35, No. 1, Jan. 1988, pp. 2-7.
Morizuki et al., "Self-Aligned . . . Double Implantation"; Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 359-362.

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