Heterojunction bipolar transistor

Details Heterojunction bipolar transistor Heterojunction bipolar transistor

1988-08-23

1990-01-23

James, Andrew J.

357 16, 357 61, H01L 2972, H01L 29205

Patent

active

048962031

ABSTRACT:
In the inventive heterojunction bipolar transistor and method of manufacturing the same, a semi-insulation layer and an external base layer sequentially epitaxially grown on a collector layer are selectively mesa-etched through a mask of an insulation film provided with an opening so that the external base layer, the semi-insulation layer and the collector layer are selectively exposed, and thereafter an internal base layer and an emitter layer are selectively epitaxially grown in sequence on the exposed regions of an external base layer, the semi-insulation layer and the collector layer. An emitter electrode is formed in a self-alignment manner through the opening of the insulation film. Thus, transistor performance is improved and a precision element size is able to be obtained.

REFERENCES:
patent: 4338138 (1982-07-01), Cavaliere et al.
patent: 4591398 (1986-05-01), Ouchi et al.
patent: 4746626 (1988-05-01), Eda et al.
IEEE Trans. on Electron Devices, vol. ED-30, No. 10, Oct. 1983, "Consideration in Trans.", Tan et al, pp. 1289-1294.
Asbeck et al, "GaAs . . . Layers", IEEE Elec. Dev. Letters, vol. EDL-5, No. 8, Aug. 1984, pp. 310-312.

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