Heterojunction bipolar transistor

Details Heterojunction bipolar transistor Heterojunction bipolar transistor

2007-11-16

2010-10-26

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S591000, C257SE29189, C257SE29185

Reexamination Certificate

active

07821037

ABSTRACT:
A heterojunction bipolar transistor includes a first conductivity type subcollector layer, a first collector layer containing a first conductivity type impurity, a third collector layer containing a higher concentration of the first conductivity type impurity than the first collector layer, a second collector layer containing a lower concentration of the first conductivity type impurity than the first collector layer, a second conductivity type base layer, a first conductivity type emitter layer containing a semiconductor with a wider bandgap than the base layer, and a first conductivity type emitter cap layer.

REFERENCES:
patent: 5336909 (1994-08-01), Katoh et al.
patent: 7038250 (2006-05-01), Sugiyama et al.
patent: 2003/0136956 (2003-07-01), Niwa et al.
patent: 2007/0096150 (2007-05-01), Ikeda
patent: 2007/0145412 (2007-06-01), Murayama et al.
patent: 2006-60221 (2006-03-01), None
patent: 2006-203036 (2006-08-01), None
Iwamoto et al., “Linearity Characteristics of GaAs HBTs adn the Influence of Collector Design,” IEEE Trans. on Micro. Theory and Techniques. vol. 48, No. 12, pp. 2377-2388 (Dec. 2000).

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