Heterojunction bipolar transistor

Details Heterojunction bipolar transistor Heterojunction bipolar transistor

2008-01-07

2009-08-25

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S565000, C257S585000, C257S590000, C257S591000, C257S592000, C257S593000

Reexamination Certificate

active

07579635

ABSTRACT:
A base layer made of SiGe mixed crystal includes a spacer layer formed in contact with a collector layer with no base impurities diffused therein and an intrinsic base layer formed in contact with an emitter layer with base impurities diffused therein. The spacer layer contains C at a low concentration. The intrinsic base layer has a first region containing C at a low concentration on the collector side and a second region containing C at a high concentration on the emitter side.

REFERENCES:
patent: 6847062 (2005-01-01), Ohnishi et al.
patent: 7300849 (2007-11-01), Enicks et al.
patent: 6-69225 (1994-03-01), None
patent: WO 02/061820 (2002-08-01), None
patent: 2004-126344 (2004-04-01), None
patent: 2004-128343 (2004-04-01), None
patent: 2004-520711 (2004-07-01), None

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