Heterojunction bipolar transistor

Details Heterojunction bipolar transistor Heterojunction bipolar transistor

2007-07-10

2007-07-10

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S198000

Reexamination Certificate

active

10560756

ABSTRACT:
An n-type InP sub collector layer2heavily doped with silicon (Si), an InP collector layer3,a p-type GaAs(0.51)Sb(0.49)base layer4heavily doped with carbon (C), an n-type In(1-y)Al(y)P emitter layer7doped with Si, an n-type InP cap layer8heavily doped with Si, and an n-type In(0.53)Ga(0.47)As contact layer9heavily doped with Si are stacked on a substrate1.

REFERENCES:
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patent: 2002-270615 (2002-09-01), None
patent: 2002-270616 (2002-09-01), None
patent: 2003-086602 (2004-03-01), None
patent: 2004-214576 (2004-07-01), None
patent: 2005-086135 (2005-03-01), None
M.W. Dvorak et al., “300 GHz InP/GaAsSb/InP Double HBTs with High Current Capability and BVceo≧6V”, IEEE Electron Device Letters, vol. 22, No. 8, Aug. 2001, pp. 361.
F. Brunner et al., “Growth Monitoring of GaAsSb: C/InP Heterostructure with Reflectance Anisotropy Spectroscopy”, TMS, Abstract of 12thICMOVPE, 2004, pp. 2.
Oda et al., “Suppression of hydrogen passivation in carbon-doped GaAsSb grows by MOCVD”, Elsevier, Journal of Crystal Growth, vol. 261, 2004, pp. 393.

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