Heterojunction bipolar transistor

Details Heterojunction bipolar transistor Heterojunction bipolar transistor

2005-12-13

2005-12-13

Munson, Gene M. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S191000, C257S588000, C257S592000, C257S616000

Reexamination Certificate

active

06974977

ABSTRACT:
A bipolar transistor is provided which is of high reliability and high gain, and which is particularly suitable to high speed operation. The bipolar transistor operates with high accuracy and with no substantial change of collector current even upon change of collector voltage. It also has less variation than conventional bipolar transistors for the collector current while ensuring high speed properties and high gain. In one example, the band gap in the base region is smaller than the band gap in the emitter and collector regions. The band gap is constant near the junction with the emitter region and decreases toward the junction with the collector region. A single crystal silicon/germanium is a typically used for the base region.

REFERENCES:
patent: 5285088 (1994-02-01), Sato et al.
patent: 5302841 (1994-04-01), Yamazaki
patent: 5323031 (1994-06-01), Shoji et al.
patent: 5352912 (1994-10-01), Crabbe et al.
patent: 5440152 (1995-08-01), Yamazaki
patent: 5721438 (1998-02-01), Tang et al.

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