Heterojunction bipolar transistor

Details Heterojunction bipolar transistor Heterojunction bipolar transistor

1991-11-27

1994-04-12

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, 257616, 257655, 257 19, H01L 31072, H01L 31109, H01L 2906

Patent

active

053028414

ABSTRACT:
A Si heterojunction bipolar transistor having a SiGe narrow gap base is disclosed, in which the Ge content in the base region is higher in the neighborhood of the base-emitter junction and also in the neighborhood of the base-collector junction as compared to a central portion of the base region, and also in which the Ge concentration distribution in the base region has a slope toward the central portion from the base-emitter and the base-collector region. The Ge content in the neighborhood of the emitter-base junction can be increased up to 30 to 40%, and the emitter-base junction diffusion potential can be greatly reduced. Further, the average Ge content can be held low owing to the slope of the Ge concentration distribution, thus ensuring freedom from dislocation.

REFERENCES:
patent: 5177583 (1993-01-01), Endo et al.

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