Heterojunction bipolar transistor

Details Heterojunction bipolar transistor Heterojunction bipolar transistor

1985-11-06

1987-07-28

Wojciechowicz, Edward J.

357 16, 357 49, 357 52, 357 91, H01L 2972

Patent

active

046834877

ABSTRACT:
A collector lead-out portion and a base lead-out portion are formed so as to oppose to each other in such a manner that active regions including a collector, a base and an emitter are sandwiched therebetween. The collector lead-out portion and the base lead-out portion are formed by ion implantation or selective epitaxial growth. Thus, a planar type heterojunction bipolar transistor capable of a high density of integration is formed.

REFERENCES:
patent: 4480319 (1984-10-01), Hotta et al.
patent: 4566020 (1986-01-01), Shannon
patent: 4571817 (1986-02-01), Birritella et al.

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