Heterojunction bipolar transistor

Details Heterojunction bipolar transistor Heterojunction bipolar transistor

1989-07-11

1991-03-19

Jackson, Jr., Jerome

357 52, 357 16, H01L 2970, H01L 29205

Patent

active

050015346

ABSTRACT:
A scalable and relatively easily manufacturable heterojunction bipolar transistor (HBT) comprises a thin (exemplarily 5-25 nm) emitter layer that serves as an etch stop layer and that furthermore passivates the extrinsic base region. The portion of the emitter layer that overlies the extrinsic base region is essentially fully depleted at all bias voltages in the normal operating range of the transistor. Base contact is established through the emitter layer, exemplarily by means of a metallized region on the emitter layer. A novel technique for carbon doping is also disclosed. Use of the novel technique makes possible a further embodiment of the inventive HBT, wherein base contact is made by means of Be implantation into the emitter layer.

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