Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1994-07-26
1996-07-16
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257 51, 257 76, 257162, 257197, 257198, 257575, H01L 2904, H01L 310256, H01L 310312, H01L 310328
Patent
active
055369529
ABSTRACT:
This transistor is a pnp transistor having a heterojunction of p-type diamond (or BP.sub.x N.sub.1-x, 6HSiC) and n-type SiC (3CSiC)and having a structure in which a p.sup.+ -SiC (3CSiC ) layer, a p-SiC (3CSiC) layer, an n.sup.+ -SiC (3CSiC) layer, a p-diamond (or BP.sub.x N.sub.1-x, 6HSiC ) layer, and a p.sup.+ -diamond (or BP.sub.x N.sub.1-x, 6HSiC) layer are formed on a substrate, and a collector electrode, a base electrode, and an emitter electrode are formed on and electrically connected to the p.sup.+ -Sic layer, the n.sup.+ -SiC layer, and the layer, respectively. This semiconductor device has a high resistance to environment.
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Morizuka et al, "AlGaAs/GaAs HBT's Fabricated by a Self-Alignment Technology Using Polyimide for Electrode Separation," IEEE Electron Device Letters, EDL-9, 598 (1988), pp. 268-270.
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Hille Rolf
Martin Wallace Valencia
Sumitomo Electric Industries Ltd.
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