Heterojunction bipolar transistor

Details Heterojunction bipolar transistor Heterojunction bipolar transistor

1994-02-28

1995-05-09

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 23, 257197, H01L 2712, H01L 4500, H01L 29161, H01L 29205

Patent

active

054142733

ABSTRACT:
A heterojunction bipolar transistor includes a multiquantum barrier structure as part of the collector and contacting the base. The MQB has an energy band structure in which the height of the effective potential barrier of the MQB increases in steps from the base into the collector. Therefore, an electric field in the collector in the vicinity of the base-collector interface is relaxed and intervalley scattering of electrons is suppressed whereby a reduction in electron mobility due to the intervalley scattering is suppressed, reducing transit time of electrons in the collector.

REFERENCES:
patent: 5091756 (1992-02-01), Iga et al.
Uenohara et al, "Analysis of Electron Wave Reflectivity and Leakage Current of Multi Quantum Barrier MOB", Transactions of Institutue of Electronics and Communication Engineers of Japan, vol. J70-C, No. 6, Jun., 1987, pp. 851-857.
Ishibashi et al, "A Possible Near-Ballistic Collection In An AlGaAs/GaAs HBT With A Modified Collector Structure", IEEE Transactions on Electron Devices, vol. 35, No. 4, Apr. 1988, pp. 401-404.

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