Heterojunction bipolar transistor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 4, 357 16, H01L 29261, H01L 2972, H01L 2712, H01L 29205

Patent

active

049790099

ABSTRACT:
2A heterojunction bipolar transistor is disclosed in which a region of a base layer which extends in the vicinity of the interface between the base layer and an emitter layer is doped with an impurity at a higher concentration than that in the inside of the base layer to thereby form a built-in field by which carriers injected from the emitter are caused to drift to the inside of the base layer. In the transistor having this structure, the current gain does not depend on the emitter area, and it is possible to obtain a large current gain with a small emitter area.

REFERENCES:
patent: 4811070 (1989-03-01), Hayashi et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Heterojunction bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heterojunction bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction bipolar transistor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1428948

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.