Heterojunction bipolar transistor

Details Heterojunction bipolar transistor Heterojunction bipolar transistor

1997-04-11

1999-11-16

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257522, 257563, H01L 27082, H01L 2970

Patent

active

059863242

ABSTRACT:
A bipolar transistor having a pair of transistor cells formed on a single crystal substrate. Each one of the cells including a collector electrode, an elongated emitter electrode and a base electrode disposed over a first surface of the substrate. The base electrode is adapted to control a flow of carriers between the collector and emitter electrodes. An emitter pad is disposed over the first surface of the substrate. A pair of conductive, air-bridge members is provided. First ends of the bridge members are connected to the emitter pad and second ends of the bridge members are connected along a length of the elongated emitter electrode. The substrate has an emitter contact disposed on a second surface of the substrate. The emitter pad and the emitter contact are electrically connected by an electrically conductive via passing through the substrate between the first and second surfaces of the substrate. The emitter pad comprises a resistive layer disposed serially between the pair of bridges and the emitter contact. The emitter pad includes: a resistive layer disposed over the first surface of the substrate and having an inner portion in electrical contact with the electrically conductive via; a dielectric layer disposed over an inner region of the resistive layer; and a pair of electrical contacts, an outer portion of each of the electrical contacts being disposed in electrical contact with outer portions of the resistive layer and inner portions of the pair of electrical contacts being electrically insulated from the resistive layer.

REFERENCES:
patent: 5793067 (1996-07-01), Miura et al.

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