Heterojunction bipolar transistor

Details Heterojunction bipolar transistor Heterojunction bipolar transistor

1991-05-20

1993-03-30

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257199, 257592, 257753, 257759, H01L 29161, H01L 2980, H01L 2972

Patent

active

051986892

ABSTRACT:
A heterojunction bipolar transistor includes a tungsten layer formed on a base layer. An insulating sidewall is formed on the base layer and along a vertical wall of an emitter layer formed on the base layer. An end of the tungsten layer faces a base-emitter heterojunction through the sidewall.

REFERENCES:
patent: 4933732 (1990-06-01), Katoh et al.
I.B.M. Technical Disclosure Bulletin, "Self-aligned silicide base contact by evaporation of silicon", Apr. 1985, pp. 6619-6620 vol. 27 No. 11.
I.B.M. Technical Disclosure Bulletin; Kirchev et al "Interconnection method for integrated circuits" vol. 13, No. 2, Apr. 1970 p. 436.
American Vacuum Society, "Refractory Silicides for I.C.'s", Muraka vol. 17, No. 4 Jul./Aug. 1980; pp. 775-791.
IEEE Bipolar Circuits & Technology Meeting; Minneapolis Sep. 12-13, 1988; pp. 202-205; L. De Jong et al "Electron recombination at the silicided base contact".
IBM Technical Disclosure Bulletin; vol. 31, No. 2 Jul. 1988 pp. 205-207 "Self-aligned mesa structure".
C. Kaanta et al; "Submicron wiring technology with tungsten and planarization"; IEEE, IEDM; pp. 209-211; 1987.
H. Kotani, et al., "A Highly Selective CVD-W Utilizing SiH.sub.4 Reduction for VLSI Contacts", IEEE, IEDM, pp. 217-221, 1987.

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