Heterojunction bipolar transistor

Details Heterojunction bipolar transistor Heterojunction bipolar transistor

1993-06-16

1995-05-02

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, H01L 3300

Patent

active

054122333

ABSTRACT:
Process for producing a transistor, particularly a heterojunction bipolar transistor, of the type comprising the known stages consisting in producing layers forming the collector, base and emitter, as well as collector, base and emitter ohmic contacts. The emitter producing stage consists in depositing, on the base layer, two superposed layers making up the emitter, the first of which is a thin layer made up of a first material having a large energy gap, and the second made up of a second material also having a high energy gap. The base ohmic contact is deposited on the first layer of the emitter. The invention also relates to the transistors obtained.

REFERENCES:
patent: 4825269 (1989-04-01), Plummer et al.

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